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M48Z2M1V 데이터시트(PDF) 15 Page - STMicroelectronics

부품명 M48Z2M1V
상세설명  5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER® SRAM
PDF  20 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M48Z2M1V 데이터시트(HTML) 15 Page - STMicroelectronics

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M48Z2M1Y, M48Z2M1V
DC and AC parameters
Doc ID 5135 Rev 5
15/20
Figure 10.
Power down/up mode AC waveforms
Table 9.
Power down/up AC characteristics
Table 10.
Power down/up trip points DC characteristics
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where
noted).
Min
Max
Unit
tER
E recovery time
40
120
ms
tF
(2)
2.
VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring
until 200 µs after VCC passes VPFD (min).
VPFD (max) to VPFD (min) VCC fall time
300
µs
tFB
(3)
3.
VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
VPFD (min) to VSO VCC fall time
M48Z2M1Y
10
µs
M48Z2M1V
150
µs
tR
VPFD (min) to VPFD (max) VCC rise time
10
µs
tWP
Write protect time from VCC = VPFD
M48Z2M1Y
40
150
µs
M48Z2M1V
40
250
µs
Symbol
Parameter(1)(2)
1.
All voltages referenced to VSS.
2.
Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where
noted).
Min
Typ
Max
Unit
VPFD
Power-fail deselect voltage
M48Z2M1Y
4.2
4.3
4.5
V
M48Z2M1V
2.8
2.9
3.0
V
VSO
Battery backup switchover voltage
M48Z2M1Y
3.0
V
M48Z2M1V
2.45
V
tDR
(3)
3.
At 25 °C; VCC = 0 V.
Expected data retention time
10
YEARS
AI01031
VCC
E
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tRB
tWP
tDR
VALID
VALID
(PER CONTROL INPUT)
RECOGNIZED
RECOGNIZED
VPFD (max)
VPFD (min)
VSO
tER



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