PD20015C datasheet(4/9 Pages) STMICROELECTRONICS

부품명	PD20015C

상세설명	RF power transistor, LdmoST family

PDF	9 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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4 / 9 page

Electrical characteristics

PD20015C

4/9

Doc ID 14136 Rev 2

Electrical characteristics

TCASE = +25 °C

2.1

Static

2.2

Dynamic

2.3

ESD protection characteristics

Table 4.

Static

Symbol

Test conditions

Min.

Typ.

Max.

Unit

IDSS

VGS = 0 V

VDS = 25 V

μA

IGSS

VGS = 5 V

VDS = 0 V

μA

VGS(Q)

VDS = 10 V

ID = 350 mA

4.2

VDS(ON)

VGS = 10 V

ID = 1 A

270

310

CISS

VGS = 0 V

VDS = 12.5 V

f = 1 MHz

COSS

VGS = 0 V

VDS = 12.5 V

f = 1 MHz

CRSS

VGS = 0 V

VDS = 12.5 V

f = 1 MHz

1.0

Table 5.

Dynamic

Symbol

Test conditions

Min.

Typ.

Max.

Unit

P3dB

VDD = 13.6 V, IDQ = 350 mA

f = 2 GHz

VDD = 13.6 V, IDQ = 350 mA, POUT = 15 W, f = 2 GHz

VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 2 GHz

Load

mismatch

VDD = 15.5 V, IDQ = 350 mA, POUT = 20 W, f = 2 GHz

All phase angles

20:1

VSWR

Table 6.

ESD protection characteristics

Test conditions

Class

Human body model

Machine model

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