MJD44H11T4 datasheet(3/8 Pages) STMICROELECTRONICS

부품명	MJD44H11T4

상세설명	Complementary power transistors

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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MJD44H11, MJD45H11

Electrical characteristics

Doc ID 5470 Rev 3

3/8

Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Note:

For PNP types voltage and current values are negative.

2.1

Typical characteristic (curves)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCEO(sus)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %.

Collector-emitter

sustaining voltage (IB = 0)

IC = 30 mA

ICES

Collector cut-off current

(VBE = 0)

VCE = 80 V

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

µA

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 8 A

IB = 0.4 A

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 8 A

IB = 0.8 A

1.5

hFE

(1)

DC current gain

IC = 2 A_

VCE = 1 V

IC = 4 A_ _

VCE = 1 V

Figure 2.

Safe operating area

Figure 3.

Derating curves

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