SD1731 datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

Obsolete

Product(s)

- Obsolete

Product(s)

SD1731 (TH562)

2/9

Table 2. Absolute Maximum Ratings (Tcase = 25°C)

Table 3. Thermal Data

ELECTRICAL SPECIFICATIONS

Table 4. Static (Tcase = 25°C)

Table 5. Dynamic (Theatsink = 25°C)

Note: 1. f1 = 30.00 MHz, f2 = 30.001 MHz

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

110

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

4.0

Device Current

PDISS

Power Dissipation (Theatsink ≤ 25°C)

233

Junction Temperature

+200

°C

TSTG

Storage Temperature

– 65 to +150

°C

Symbol

Parameter

Value

Unit

RTH(j-c)

Junction-Case Thermal Resistance

0.55

°C/W

RTH(c-s)

Case-Heatsink Thermal Resistance

0.2

°C/W

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

BVCBO

IC = 200 mA; IE = 0 mA

110

—

BVCEO

IC = 200 mA; IB = 0 mA

—

BVEBO

IE = 20 mA; IC = 0 mA

4.0

—

ICEO

VCE = 30 V; IE = 0 mA

—

ICES

VCE = 55 V; IE = 0 mA

—

hFE

VCE = 6 V; IC = 10 A

—

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

POUT

f = 30 MHz; VCE = 50 V; ICQ = 150 mA

220

—

(1)

POUT = 220 W PEP; VCE = 50 V; ICQ = 150 mA

—

IMD(1)

POUT = 220 W PEP; VCE = 50 V; ICQ = 150 mA

—

–30

dBc

ηc(1)

POUT = 220 W PEP; VCE = 50 V; ICQ = 150 mA

—

COB

f = 1 MHz; VCB = 50 V

—

330

—

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