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STT13005D 데이터시트(PDF) 1 Page - STMicroelectronics |
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STT13005D 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() November 2009 Doc ID 14897 Rev 2 1/10 10 STT13005D High voltage fast-switching NPN power transistor Features ■ Integrated antiparallel collector-emitter diode ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low power converters Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Figure 1. Internal schematic diagram SOT-32 3 2 1 Table 1. Device summary Order codes Marking Package Packaging STT13005D T13005D SOT-32 Tube STT13005D-K T13005D SOT-32 Bag www.st.com |
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