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IRFY310 데이터시트(PDF) 1 Page - Seme LAB

부품명 IRFY310
상세설명  N-Channel MOSFET in a Hermetically sealed
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제조업체  SEME-LAB [Seme LAB]
홈페이지  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

IRFY310 데이터시트(HTML) 1 Page - Seme LAB

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IRFY310
V
DSS = 400V
I
D = 1.2A
R
DS(ON) = 4.15Ω
Ω
Ω
Ω
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
Parameter
Min.
Typ.
Max.
Units
V
DSS
Drain – Source Breakdown Voltage
400
V
I
D
Continuous Drain Current
1.2
A
P
D
Power Dissipation
11
W
R
DS(ON)
Static Drain – Source On–State Resistance
4.15
Ω
C
ISS
Input Capacitance
170
pF
Q
g
Total Gate Charge
8.4
nC
t
td(on)
Turn–On Delay Time
15
ns
t
tr
Rise Time
20
ns
t
td(off)
Turn–Off Delay Time
35
ns
t
f
Fall Time
30
ns
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
13-Sep-02
TO257AB (TO220M)
PINOUTS
1 – Gate
2 – Drain
Case – Source
N-Channel MOSFET in
a Hermetically sealed
TO257AB Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
2.54 (0.1)
BSC
3.70 Dia. Nom
1 2 3
0.8
(0.03)
2.70
(0.106)
1.0
(0.039)
4.6 (0.18)
10.6 (0.42)


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