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DMS3019SSD 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 DMS3019SSD
상세설명  ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  10 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMS3019SSD 데이터시트(HTML) 2 Page - Diodes Incorporated

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DMS3019SSD
Document number: DS35053 Rev. 2 - 2
2 of 10
www.diodes.com
October 2010
© Diodes Incorporated
DMS3019SSD
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 4) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
7.0
5.6
A
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
9.0
7.0
A
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = 25°C
TA = 70°C
ID
8.0
6.5
A
Pulsed Drain Current (Note 6)
IDM
40
A
Avalanche Current (Notes 6 & 7)
IAR
13
A
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
EAR
25.4
mJ
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 4) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
5.7
4.6
A
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
7.0
5.6
A
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = 25°C
TA = 70°C
ID
6.0
4.7
A
Pulsed Drain Current (Note 6)
ID
40
A
Avalanche Current (Notes 6 & 7)
IAR
16
A
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
EAR
12.8
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 4)
PD
1.19
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
RθJA
107
°C/W
Power Dissipation (Note 5)
PD
1.79
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
RθJA
70
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. The value in any given application depends on the user’s specific
board design. Device contains two active die running at equal power.
5. Device mounted on 1 inch x 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running
at equal power.
6. Repetitive rating, pulse width limited by junction temperature.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C



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