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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SC2884 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SC2884 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC2884 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1204 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA PC 500 Collector power dissipation PC (Note 1) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on a ceramic substrate (250 mm 2 × 0.8 t) Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
유사한 부품 번호 - 2SC2884 |
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유사한 설명 - 2SC2884 |
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