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2SC2983 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SC2983 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2SC2983 2005-02-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 160 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1.0 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 A, IB = 0 160 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 5 ― ― V DC current gain hFE (Note) VCE = 5 V, IC = 100 mA 70 ― 240 Collector emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA ― ― 1.5 V Base-emitter voltage VBE VCE = 5 V, IC = 500 mA ― ― 1.0 V Transition frequency fT VCE = 10 V, IC = 100 mA ― 100 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 25 ― pF Note: hFE classification O: 70 to 140, Y: 120 to 240 Marking C2983 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
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