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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SC3072 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SC3072 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC3072 2005-02-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) • High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V VCES 40 Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 8 V DC IC 5 Collector current Pulse (Note 1) ICP 8 A Base current IB 0.5 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 10 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) |
유사한 부품 번호 - 2SC3072 |
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유사한 설명 - 2SC3072 |
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