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2SC3474 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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2SC3474 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() 2SC3474 2005-02-01 4 Collector current IC (A) VBE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Safe Operating Area Ambient temperature Ta (°C) PC – Ta 24 0 0 (1) Tc = Ta infinite heat sink (2) Mounted on a ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 25 50 75 100 125 150 175 4 8 12 16 20 (1) (2) (3) 0.1 0.01 Common emitter IC/IB = 300 25 100 Tc = −55°C 5 0.03 0.1 0.3 1 2 0.3 0.5 1 3 Common emitter VCE = 1 V −55 25 Tc = 100°C 0 2.0 1.6 1.2 0.8 0.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 5 IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation Tc = 25°C 30 100 10 3 1 0.03 0.05 0.1 0.3 0.5 3 100 µs* |
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