2SC4497 datasheet(2/5 Pages) TOSHIBA

부품명	2SC4497

상세설명	High Voltage Control Applications

PDF	5 Pages

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC4497

2003-03-27

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 300 V, IE = 0

0.1

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0

0.1

Collector-base breakdown voltage

V (BR) CBO

IC = 0.1 mA, IE = 0

300

Collector-emitter breakdown voltage

V (BR) CEO

IC = 1 mA, IB = 0

300

hFE (1)

(Note)

VCE = 10 V, IC = 20 mA

150

DC current gain

hFE (2)

VCE = 10 V, IC = 1 mA

Collector-emitter saturation voltage

VCE (sat)

IC = 20 mA, IB = 2 mA

0.5

Base-emitter saturation voltage

VBE (sat)

IC = 20 mA, IB = 2 mA

1.2

Transition frequency

VCE = 10 V, IC = 10 mA

MHz

Collector output capacitance

Cob

VCB = 20 V, IE = 0, f = 1 MHz

Note: hFE (1) classification R: 30~90, O: 50~150

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