DMP4050SSD

Document Number DS32107 Rev 2 - 2

4 of 8

www.diodes.com

November 2010

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMP4050SSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-40

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

-0.5

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1.0

⎯

-3.0

V

Static Drain-Source On-Resistance (Note 9)

⎯

0.038

0.050

Ω

0.055

0.079

Forward Transconductance (Notes 9 & 10)

⎯

14

⎯

S

Diode Forward Voltage (Note 9)

⎯

-0.86

-1.2

V

Reverse recovery time (Note 10)

18

⎯

ns

Reverse recovery charge (Note 10)

⎯

12.7

⎯

nC

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

⎯

674

⎯

pF

f = 1MHz

Output Capacitance

⎯

115

⎯

pF

Reverse Transfer Capacitance

⎯

67.7

⎯

pF

Total Gate Charge (Note 11)

⎯

6.9

⎯

nC

Total Gate Charge (Note 11)

⎯

13.9

⎯

nC

Gate-Source Charge (Note 11)

⎯

2

⎯

nC

Gate-Drain Charge (Note 11)

⎯

3.4

⎯

nC

Turn-On Delay Time (Note 11)

⎯

1.9

⎯

ns

Turn-On Rise Time (Note 11)

⎯

3.1

⎯

ns

Turn-Off Delay Time (Note 11)

⎯

31.5

⎯

ns

Turn-Off Fall Time (Note 11)

⎯

12.6

⎯

ns

Notes:

9.

Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

10. For design aid only, not subject to production testing.

11. Switching characteristics are independent of operating junction temperatures.