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STM8L151C4T3 데이터시트(PDF) 67 Page - STMicroelectronics |
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STM8L151C4T3 데이터시트(HTML) 67 Page - STMicroelectronics |
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67 / 122 page ![]() STM8L151xx, STM8L152xx Electrical parameters Doc ID 15962 Rev 5 67/122 IDD(RUN) Supply current in Run mode All peripherals OFF, code executed from Flash, VDD from 1.65 V to 3.6 V HSI RC osc.(9) fCPU = 125 kHz 0.43 0.55 0.56 0.58 0.62 mA fCPU = 1 MHz 0.60 0.77 0.80 0.82 0.87 fCPU = 4 MHz 1.11 1.34 1.37 1.39 1.43 fCPU = 8 MHz 1.90 2.20 2.23 2.31 2.40 fCPU = 16 MHz 3.8 4.60 4.75 4.87 4.88 HSE external clock (fCPU=fHSE) (7) fCPU = 125 kHz 0.30 0.36 0.39 0.44 0.47 fCPU = 1 MHz 0.40 0.50 0.52 0.55 0.56 fCPU = 4 MHz 1.15 1.31 1.40 1.45 1.48 fCPU = 8 MHz 2.17 2.33 2.44 2.56 2.77 fCPU = 16 MHz 4.0 4.46 4.52 4.59 4.77 LSI RC osc. fCPU = fLSI 0.110 0.123 0.130 0.140 0.150 LSE external clock (32.768 kHz)(10) fCPU = fLSE 0.100 0.101 0.104 0.119 0.122 1. Based on characterization results, unless otherwise specified 2. All peripherals OFF, VDD from 1.65 V to 3.6 V, HSI internal RC osc. , fCPU=fSYSCLK 3. For devices with suffix 6 4. For devices with suffix 3 5. CPU executing typical data processing 6. The run from RAM consumption can be approximated with the linear formula: IDD(run_from_RAM) = Freq * 90 µA/MHz + 380 µA 7. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 30. 8. Data guaranteed, each individual device tested in production. 9. The run from Flash consumption can be approximated with the linear formula: IDD(run_from_Flash) = Freq * 195 µA/MHz + 440 µA 10. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 31 Table 19. Total current consumption in Run mode (continued) Symbol Para meter (1) Conditions(1)(2) Typ Max Unit 55°C 85 °C (3) 105 °C (4) 125 °C (4) |
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