DS30578 Rev. 5 - 2

3 of 5

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DVR1V8W - DVR5V0W

© Diodes Incorporated

0

50

25

50

75

100

125

150

175

200

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Max Power Dissipation vs. Ambient Temperature (Total Device)

A

100

150

200

0

1

1,000

100

0.0001

.001

.01

1

10

.1

I , COLLECTOR CURRENT (A)

Fig. 2 Typical DC Current Gain vs. Collector Current (NPN Transistor)

C

V

= 1.0V

CE

1

100

10

0.1

1

10

100

V

, COLLECTOR-BASE VOLTAGE (V)

Fig. 3 Output Capacitance vs.

Collector-Base Voltage (NPN Transistor)

CB

1

10

1,000

100

0.0001 .001

.01

.1

1

10

I , COLLECTOR CURRENT (A)

Fig. 4 Collector Saturation Voltage vs.

Collector Current (NPN Transistor)

C

0

10

20

30

40

50

0

1

2

3

456

7

89

10

V , ZENER VOLTAGE (V)

Fig. 5 Zener Breakdown Characteristics

(DVR1V8W - DVR3V3W)

Z

10

100

1,000

10

100

1

V , NOMINAL ZENER VOLTAGE (V)

Fig. 6 Total Capacitance vs. Nominal Zener Voltage

(DVR1V8W - DVR3V3W)

Z

T= 25 °C

f = 1MHz

j

V = 1V

R

V = 2V

R

V = 1V

R

V = 2V

R