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DDTC123JLP 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 DDTC123JLP
상세설명  PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR
PDF  7 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DDTC123JLP 데이터시트(HTML) 2 Page - Diodes Incorporated

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DDTCxxxxLP (R1
≠R2 Series)
Document number: DS30755 Rev. 7 - 2
2 of 7
www.diodes.com
March 2009
© Diodes Incorporated
DDTCxxxxLP (R1
≠R2 Series)
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
P/N
Symbol
Min
Typ
Max
Unit
Test Condition
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
50
⎯
⎯
V
IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage *
V(BR)CEO
50
⎯
⎯
V
IC = 2mA, IB = 0
Emitter-Base Breakdown Voltage *
V(BR)EBO
4.5
⎯
⎯
V
IE = 50μA, IC = 0
Collector Cutoff Current *
ICEX
⎯
⎯
0.5
μA
VCE = 50V, VEB(OFF) = 3.0V
Base Cutoff Current (IBEX)
IBL
⎯
⎯
0.5
μA
VCE = 50V, VEB(OFF) = 3.0V
Collector-Base Cut Off Current
ICBO
⎯
⎯
0.5
μA
VCB = 50V, IE = 0
Collector-Emitter Cut Off Current, IO(OFF)
ICEO
⎯
⎯
0.5
μA
VCE = 50V, IB = 0
Emitter-Base Cut Off Current
IEBO
⎯
⎯
0.5
mA
VEB = 5V, IC = 0
Input-Off Voltage
VI(OFF)
⎯
⎯
0.5
V
VCE = 5V, IC = 100μA
On Characteristics (Note 4)
Base-Emitter Turn-On Voltage*
DDTC123JLP
VBE(ON)
⎯
⎯
0.85
V
VCE = 5V, IC = 2mA
DDTC143ZLP
⎯
⎯
0.85
DDTC114YLP
⎯
⎯
0.95
Base-Emitter Saturation Voltage*
DDTC123JLP
VBE(SAT)
⎯
⎯
0.98
V
IC = 10mA, IB = 1mA, VCE=5V
DDTC143ZLP
⎯
⎯
0.998
DDTC114YLP
⎯
⎯
0.98
Input-On Voltage
VI(ON)
1.1
⎯
⎯
V
VO = 0.3V, IC = 5mA
Input Current
DDTC123JLP
II
⎯
⎯
7.2
mA
VI = 5V
DDTC143ZLP
⎯
⎯
1.5
DDTC114YLP
⎯
⎯
7.2
DC Current Gain
hFE
50
⎯
⎯
⎯
VCE = 5V, IC = 1mA
70
⎯
⎯
⎯
VCE = 5V, IC = 2mA
125
⎯
⎯
⎯
VCE = 5V, IC = 5mA
150
⎯
⎯
⎯
VCE = 5V, IC = 10mA
180
⎯
⎯
⎯
VCE = 5V, IC = 50mA
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
0.15
V
IC = 10mA, IB = 1mA
⎯
⎯
0.2
V
IC = 50mA, IB = 5mA
Output On Voltage (Same as VCE(SAT))
VO(ON)
⎯
⎯
0.3
IJ = 2.5mA, IO = 50mA
Input Resistor +/-30%
ΔR1
-30
⎯
30
%
⎯
Resistor Ratio
Δ (R2/R1)
-20
⎯
-20
%
⎯
Small Signal Characteristics
Transition Frequency (gain bandwidth product)
fT
⎯
250
⎯
MHz
VCE = 10V, IE = 5mA, f = 100MHz
*Guaranteed by design
Notes:
4.
Short duration pulse test used to minimize self-heating effect.
Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
Typical Characteristics Curves
@TA = 25°C unless otherwise specified
0
50
100
150
200
250
300
0
25
50
75
100
125
150
175
R
= 500 C/W
θJA
°
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs. Ambient Temperature
(Note 3)
A
°



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