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BC847CDLP-7 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 BC847CDLP-7
상세설명  NPN DUAL SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BC847CDLP-7 데이터시트(HTML) 2 Page - Diodes Incorporated

  BC847CDLP-7 Datasheet HTML 1Page - Diodes Incorporated BC847CDLP-7 Datasheet HTML 2Page - Diodes Incorporated BC847CDLP-7 Datasheet HTML 3Page - Diodes Incorporated BC847CDLP-7 Datasheet HTML 4Page - Diodes Incorporated  
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DS30817 Rev. 6 - 2
2 of 4
www.diodes.com
BC847CDLP
© Diodes Incorporated
Electrical Characteristics @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 5)
V(BR)CBO
50
⎯
⎯
V
IC = 10µA, IB = 0
Collector-Emitter Breakdown Voltage (Note 5)
V(BR)CEO
45
⎯
⎯
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 5)
V(BR)EBO
6
⎯
⎯
V
IE = 1µA, IC = 0
DC Current Gain (Note 5)
hFE
420
650
800
⎯
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 5)
VCE(SAT)
⎯
55
130
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 5)
VBE(SAT)
⎯
700
900
⎯
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 5)
VBE(ON)
580
⎯
660
⎯
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current (Note 5)
ICES
ICBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
15
15
5.0
nA
nA
µA
VCE = 50V
VCB = 30V
VCE = 30V, TA = 150°C
Gain Bandwidth Product
fT
100
⎯
⎯
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance
CCBO
⎯
2.0
⎯
pF
VCB = 10V, f = 1MHz
Notes: 3. Device mounted on FR-5 PCB pad layout as shown on page 4.
5. Short duration test pulse used to minimize self-heating effect.
0
50
100
50
100
150
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Power Dissipation vs. Ambient Temperature (Note 3)
A
150
200
250
0
300
350
25
75
125
V
, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector Emitter Voltage
CE
0.00
0.05
0.10
0.15
0.20
0.25
0
1
2
34
5
6



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