전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

DMC2004LPK 데이터시트(PDF) 1 Page - Diodes Incorporated

부품명 DMC2004LPK
상세설명  COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC2004LPK 데이터시트(HTML) 1 Page - Diodes Incorporated

  DMC2004LPK Datasheet HTML 1Page - Diodes Incorporated DMC2004LPK Datasheet HTML 2Page - Diodes Incorporated DMC2004LPK Datasheet HTML 3Page - Diodes Incorporated DMC2004LPK Datasheet HTML 4Page - Diodes Incorporated DMC2004LPK Datasheet HTML 5Page - Diodes Incorporated DMC2004LPK Datasheet HTML 6Page - Diodes Incorporated DMC2004LPK Datasheet HTML 7Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 1 / 7 page
background image
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
1 of 7
www.diodes.com
September 2007
© Diodes Incorporated
DMC2004LPK
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
Low On-Resistance
•
Low Gate Threshold Voltage VGS(th) < 1V
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Complementary Pair MOSFET
•
Ultra-Small Surface Mount Package
•
Lead Free/RoHS Compliant (Note 2)
•
ESD Protected Gate
•
"Green" Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: DFN1612-6
•
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminal Connections: See Diagram
•
Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 6
•
Ordering Information: See Page 6
•
Weight: 0.003 grams (approximate)
DFN1612-6
S
1
S
2
G
1
G
2
Q
1
Q
2
D
2
D
1
12
3
4
5
6
ESD protected
Internal Schematic
TOP VIEW
Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 1)
TA = 25°C
TA = 85°C
ID
750
540
mA
Maximum Ratings P-CHANNEL – Q2 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 1)
TA = 25°C
TA = 85°C
ID
-600
-430
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
Pd
500
mW
Thermal Resistance, Junction to Ambient
RθJA
250
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.


유사한 부품 번호 - DMC2004LPK

제조업체부품명데이터시트상세설명
logo
Diodes Incorporated
DMC2004LPK DIODES-DMC2004LPK_15 Datasheet
353Kb / 8P
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev 7
More results

유사한 설명 - DMC2004LPK

제조업체부품명데이터시트상세설명
logo
Diodes Incorporated
BSS8402DW DIODES-BSS8402DW Datasheet
138Kb / 5P
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30380 Rev. 4 - 2
BSS8402DW DIODES-BSS8402DW_1 Datasheet
570Kb / 5P
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30380 Rev. 8 - 2
BSS8402DW DIODES-BSS8402DW_08 Datasheet
179Kb / 5P
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30380 Rev. 12 - 2
DMC2004VK DIODES-DMC2004VK Datasheet
369Kb / 7P
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30925 Rev. 4 - 2
DMC2004DWK DIODES-DMC2004DWK Datasheet
358Kb / 8P
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS31114 Rev. 4 - 2
DMC2004DWK DIODES-DMC2004DWK_15 Datasheet
358Kb / 8P
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev 4
DMC2004LPK DIODES-DMC2004LPK_15 Datasheet
353Kb / 8P
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev 7
DMC2004VK DIODES-DMC2004VK_15 Datasheet
371Kb / 8P
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Rev 6
logo
Shenzhen Luguang Electr...
BSS8402DW LUGUANG-BSS8402DW Datasheet
882Kb / 6P
Complementary Pair Enhancement Mode Field Effect Transistor
logo
Shenzhen Huazhimei Semi...
BSS8402DW HMSEMI-BSS8402DW Datasheet
315Kb / 6P
Complementary Pair Enhancement Mode Field Effect Transistor
More results


Html Pages

1 2 3 4 5 6 7


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com