MMBTH10 datasheet(1/3 Pages) DIODES

부품명	MMBTH10

상세설명	NPN SURFACE MOUNT VHF/UHF TRANSISTOR

PDF	3 Pages

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제조업체	DIODES [Diodes Incorporated]

홈페이지	http://www.diodes.com

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MMBTH10

NPN SURFACE MOUNT VHF/UHF TRANSISTOR

Features

•

Designed for VHF/UHF Amplifier Applications and High

Output VHF Oscillators

•

High Current Gain Bandwidth Product

•

Ideal for Mixer and RF Amplifier Applications with

collector currents in the 100

μA - 30 mA Range

•

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

•

Qualified to AEC-Q101 Standards for High

Reliability

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

•

Marking Information: K3H, K3Y; See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.008 grams (approximate)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

C

B

E

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

3.0

V

Collector Current - Continuous (Note 1)

IC

50

mA

Power Dissipation (Note 1)

PD

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Emitter Breakdown Voltage

V(BR)CEO

25

⎯

V

IC = 1mA, IB = 0

Collector-Base Breakdown Voltage

V(BR)CBO

30

⎯

V

IC = 100μA, IE = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

3.0

⎯

V

IE = 10μA, IC = 0

Collector Cutoff Current

ICBO

⎯

100

nA

VCB = 25V, IE = 0

Emitter Cutoff Current

IEBO

⎯

100

nA

VEB = 2V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

60

⎯

IC = 4mA, VCE = 10.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.5

V

IC = 4mA, IB = 400μA

Base-Emitter On Voltage

VBE(SAT)

⎯

0.95

V

IC = 4mA, VCE = 10.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

650

⎯

MHz

VCE = 10V, f = 100MHz, IC = 4mA

Collector-Base Capacitance

CCB

⎯

0.7

pF

VCB = 10V, f = 1.0MHz, IE = 0

Collector-Base Feedback Capacitance

CRB

⎯

0.65

pF

VCB = 10V, f = 1.0MHz, IE = 0

Collector-Base Time Constant

Rb’Cc

⎯

9

ps

VCB = 10V, f = 31.8MHz, IC = 4mA

Notes:

1.

Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2.

Short duration pulse test used to minimize self-heating effect.

3.

No purposefully added lead. Halogen and Antimony Free.

4.

Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS31031 Rev. 12 - 2

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MMBTH10

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