DMN3115UDM

Document number: DS31187 Rev. 6 - 2

2 of 4

www.diodes.com

May 2010

© Diodes Incorporated

DMN3115UDM

0

1

2

3

4

5

6

7

8

9

10

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V

= 5V

Pulsed

DS

0

1

2

3

4

5

6

7

8

9

10

0.5

1

1.5

2

0

Fig. 3 On-Resistance vs. Drain Current & Gate Voltage

0.01

0.1

1

0.01

0.1

1

10

I , DRAIN-SOURCE CURRENT (A)

D

V

= 2.5V

GS

V

= 1.5V

GS

V

= 4.5V

GS

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

1.0

Fig. 5 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

I = 250µA

D

0

5

10

15

20

25

30

Fig. 6 Typical Total Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

C

iss

C

rss