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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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DMC3035LSD 데이터시트(PDF) 2 Page - Diodes Incorporated |
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DMC3035LSD 데이터시트(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMC3035LSD Document number: DS31312 Rev. 3 - 2 2 of 7 www.diodes.com October 2008 © Diodes Incorporated DMC3035LSD Electrical Characteristics N-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1 ⎯ 2.1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 28 51 35 61 m Ω VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A Forward Transfer Admittance |Yfs| ⎯ 7.7 ⎯ S VDS = 5V, ID = 6.9A Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 384 ⎯ pF Output Capacitance Coss ⎯ 67 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 48 ⎯ pF VDS = 15V, VGS = 0V, f = 1.0MHz Gate Resistance RG ⎯ 1.3 ⎯ Ω VGS = 0V, VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 4.3 8.6 ⎯ VDS = 10V, VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A Gate-Source Charge Qgs ⎯ 1.2 ⎯ VDS = 10V, VGS = 10V, ID = 10A Gate-Drain Charge Qgd ⎯ 2.5 ⎯ nC VDS = 10V, VGS = 10V, ID = 10A Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 μA VDS = -24V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -1 ⎯ -2.1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 56 98 65 115 m Ω VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A Forward Transfer Admittance |Yfs| ⎯ ⎯ 5.2 S VDS = -10V, ID = -5A Diode Forward Voltage (Note 5) VSD -0.5 ⎯ -1.2 V VGS = 0V, IS = -2.6A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 336 ⎯ pF Output Capacitance Coss ⎯ 70 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 49 ⎯ pF VDS = -25V, VGS = 0V, f = 1.0MHz Gate Resistance RG ⎯ 4.6 ⎯ Ω VGS = 0V, VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 4.0 7.8 ⎯ VDS = 15V, VGS = -4.5V, ID = -5A VDS = 15V, VGS = -10V, ID = -5A Gate-Source Charge Qgs ⎯ 1.0 ⎯ VDS = 15V, VGS = -10V, ID = -5A Gate-Drain Charge Qgd ⎯ 2.5 ⎯ nC VDS = 15V, VGS = -10V, ID = -5A Notes: 5. Short duration pulse test used to minimize self-heating effect. |
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