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FMMT459 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 FMMT459
상세설명  500V Silicon NPN high voltage switching transistor
PDF  6 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT459 데이터시트(HTML) 4 Page - Diodes Incorporated

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FMMT459
Issue 5 - August 2005
4
www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Note: For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base
breakdown voltage
BVCBO
500
700
V
IC = 100 A
Collector-emitter
breakdown voltage
BVCEV
500
700
V
IC = 10 A,
0.3V > VBE > -1V
Collector-emitter
breakdown voltage
BVCEO
450
500
V
IC = 10mA
*
Emitter-base
breakdown voltage
BVEBO
68.1
V
IE = 100 A
Emitter-base
breakdown voltage
(reverse blocking)
BVECV
68.1
V
IC = 1 A,
0.3V > VBC > -6V
Collector-emitter
cut-off current
ICES
100
nA
VCE=450V
Collector-base
cut-off current
ICBO
100
nA
VCB=450V
Emitter-base
cut-off current
IEBO
100
nA
VEB=5V
Static forward current
transfer ratio
HFE
50
120
70
IC = 30mA, VCE = 10V
IC = 50mA
*, V
CE = 10V
Collector-emitter
saturation voltage
VCE(sat)
60
70
75
90
mV
mV
IC = 20mA, IB = 2mA
*
IC = 50mA, IB = 6mA
*
NOTES:
* Measured under pulsed conditions. Pulse width = 300 s; duty cycle <2%
Base-emitter
saturation voltage
VBE(sat)
0.76
0.9
V
IC = 50mA, IB = 5mA
*
Base-emitter turn-on
voltage
VBE(on)
0.71
0.9
V
IC = 50mA, VCE = 10V
*
Transition frequency
fT
50
MHz
IC = 10mA, VCE = 20V
f = 20MHZ
Output capacitance
Cobo
5
PFVCB = 20V, f = 1MHZ
Turn-on time
t(ON)
113
ns
IC = 50mA, VC = 100V
IB1 = 5mA, IB2 = 10mA
Turn-off time
t(OFF)
3450
ns
IC = 50mA, VC = 100V
IB1 = 5mA, IB2 = 10mA



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