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FMMT591 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 FMMT591
상세설명  Medium power PNP transistor in SOT23
PDF  8 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT591 데이터시트(HTML) 4 Page - Diodes Incorporated

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FMMT591
Issue 4 - September 2007
4
www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BVCBO
-80
V
IC = -100 A
Collector-emitter
breakdown voltage
BVCEO
-60
V
IC = -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
Emitter-base breakdown
voltage
BVEBO
-7
-8.1
V
IE = -100 A
Collector cut-off current
ICBO
<1
-100
nA
VCB = -60V
Collector – emitter current
cut-off current
ICES
<1
-100
nA
Emitter cut-off current
IEBO
<1
-100
nA
VEB = -5.6V
Collector-emitter
saturation voltage
VCE(sat)
-155
-180
mV
IC = -0.5A, IB = -50mA(*)
-295
-350
mV
IC = -1A, IB = -100mA(*)
Base-emitter saturation
voltage
VBE(sat)
965
-1200
mV
IC = -1A, IB = -100mA(*)
Base-emitter turn-on
voltage
VBE(on)
830
-1000
mV
IC = -1A, VCE = -5V(*)
Static forward current
transfer ratio
hFE
100
220
IC = -1mA, VCE = -5V(*)
100
175
300
IC = -500mA, VCE = -5V(*)
80
155
IC = -1A, VCE = -5V
15
40
IC = -2A, VCE = -5V
Transition frequency
fT
150
MHz
IC = -50mA, VCE = -10V
f = 100MHz
Output capacitance
COBO
10
pF
VCB = -10V, f = 1MHz(*)



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