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FMMT625 데이터시트(PDF) 3 Page - Diodes Incorporated

부품명 FMMT625
상세설명  150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
PDF  6 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT625 데이터시트(HTML) 3 Page - Diodes Incorporated

  FMMT625 Datasheet HTML 1Page - Diodes Incorporated FMMT625 Datasheet HTML 2Page - Diodes Incorporated FMMT625 Datasheet HTML 3Page - Diodes Incorporated FMMT625 Datasheet HTML 4Page - Diodes Incorporated FMMT625 Datasheet HTML 5Page - Diodes Incorporated FMMT625 Datasheet HTML 6Page - Diodes Incorporated  
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FMMT625
Document number: DS33237 Rev. 4 - 2
3 of 6
www.diodes.com
October 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT625
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
150
300
-
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 6)
V(BR)CEO
150
175
-
V
IC = 10mA
Emitter-Base Breakdown Voltage
V(BR)EBO
5
8.3
-
V
IE = 100µA
Collector Cut-off Current
ICBO
-
-
100
nA
VCB =130V
Emitter Cut-off Current
IEBO
-
-
100
nA
VEB = 4V
Collector Emitter Cut-off Current
ICES
-
-
100
nA
VCES =130V
Static Forward Current Transfer Ratio (Note 6)
hFE
200
300
30
-
400
450
45
15
-
-
-
-
-
IC = 10mA, VCE = 10V
IC = 200mA, VCE = 10V
IC = 1A, VCE = 10V
IC = 3A, VCE = 10V
Collector-Emitter Saturation Voltage (Note 6)
VCE(sat)
-
-
-
26
110
180
50
200
300
mV
IC =0.1A, IB = 10mA
IC =0.1A, IB = 1mA
IC =1A, IB = 50mA
Base-Emitter Saturation Voltage (Note 6)
VBE(sat)
-
0.85
1.0
V
IC =1A, IB = 50mA
Base-Emitter Saturation Voltage (Note 6)
VBE(on)
-
0.74
1.0
V
IC =1A, VCE = 10V
Transition Frequency
fT
100
135
-
MHz
IC = 50mA, VCE = 10V,
f=100MHz
Collector Output Capacitance
Cobo
-
6
10
pF
VCB = 10V, f=1MHz
Turn-On Time
t(on)
-
160
-
ns
VCC = 50V, IC = 500mA,
IB1 = -IB2 = 50mA
Turn-Off Time
t(off)
-
1500
-
ns
Notes:
6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤ 2%



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