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FMMT734 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 FMMT734
상세설명  ?쏶UPER SOT??SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR
PDF  3 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT734 데이터시트(HTML) 2 Page - Diodes Incorporated

  FMMT734 Datasheet HTML 1Page - Diodes Incorporated FMMT734 Datasheet HTML 2Page - Diodes Incorporated FMMT734 Datasheet HTML 3Page - Diodes Incorporated  
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-100
-130
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-100
-116
V
IC=-5mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-12
-17
V
IE=-100µA
Collector Cut-Off
Current
ICBO
-10
nA
VCB=-80V
Emitter Cut-Off
Current
IEBO
-10
nA
VEB=-7V
Collector Emitter
Cut-Off Current
ICES
-200
nA
VCES=-80V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.68
-0.72
-0.78
-0.86
-0.72
-0.90
-0.75
-0.80
-0.86
-0.97
—
-1.05
V
V
V
V
V
V
IC=-100mA, IB=-1mA*
IC=-250mA,IB=-1mA*
IC=-500mA, IB=-5mA*
IC=-800mA, IB=-5mA*
IC=-800mA, IB=-5mA †*
IC=-1A, IB=-5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.60
-1.75
V
IC=-1A, IB=-5mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-1.30
-1.75
V
IC=-1A, VCE=-5V*
Static Forward
Current Transfer
Ratio
hFE
20K
15K
5K
60K
60K
50K
15K
150
20K
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-5A, VCE=-5V*
IC=-1A, VCE=-2V*
Transition
Frequency
fT
140
MHz
IC=-10mA, VCE=-10V
f=100MHz
Output Capacitance Cobo
14
25
pF
VCB=-10V, f=1MHz
Turn-On Time
t(on)
460
ns
IC=-500mA, VCC=-20V
IB=±1mA
Turn-Off Time
t(off)
1200
ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
†
Tamb=150°C
FMMT734



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