ZHCS500 datasheet(1/3 Pages) DIODES

부품명	ZHCS500

상세설명	SOT23 SILICON HIGH CURRENT

PDF	3 Pages

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제조업체	DIODES [Diodes Incorporated]

홈페이지	http://www.diodes.com

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SOT23 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE “SuperBAT”

ISSUE 1- September 1997

7

FEATURES:

•

Low V

F

•

High Current Capability

APPLICATIONS:

•

DC - DC converters

•

Mobile telecomms

•

PCMCIA

PARTMARK DETAIL: ZS5

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Continuous Reverse Voltage

VR

40

V

Forward Current (Continuous)

IF

500

mA

Forward Voltage @ IF =500mA

VF

550

mV

Average Peak Forward Current; D.C. = 50%

IFAV

1000

mA

Non Repetitive Forward Current t

≤100µs

t

≤10ms

IFSM

6.75

3

A

Power Dissipation at Tamb=25° C

Ptot

330

mW

Storage Temperature Range

Tstg

-55 to + 150

° C

Junction Temperature

Tj

125

° C

ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Reverse Breakdown

Voltage

V(BR)R

40

60

V

IR= 200µA

Forward Voltage

VF

270

300

370

465

550

640

810

440

300

350

460

550

670

780

1050

mV

IF= 50mA*

IF= 100mA*

IF= 250mA*

IF= 500mA*

IF= 750mA*

IF= 1000mA*

IF= 1500mA*

IF= 500mA, Tamb=100° C*

Reverse Current

IR

15

40

µA

VR=30V

Diode Capacitance

CD

20

pF

f= 1MHz,VR= 25V

Reverse Recovery

Time

trr

10

ns

switched from

IF = 500mA to IR = 500mA

Measured at IR = 50mA

*Measured under pulsed conditions. Pulse width= 300

µs; duty cycle ≤2%.

ZHCS500

1

3

C

1

A

3

2

SOT23

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