전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

BCR16CS-16LB 데이터시트(PDF) 2 Page - Renesas Technology Corp

부품명 BCR16CS-16LB
상세설명  Triac Medium Power Use
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BCR16CS-16LB 데이터시트(HTML) 2 Page - Renesas Technology Corp

  BCR16CS-16LB Datasheet HTML 1Page - Renesas Technology Corp BCR16CS-16LB Datasheet HTML 2Page - Renesas Technology Corp BCR16CS-16LB Datasheet HTML 3Page - Renesas Technology Corp BCR16CS-16LB Datasheet HTML 4Page - Renesas Technology Corp BCR16CS-16LB Datasheet HTML 5Page - Renesas Technology Corp BCR16CS-16LB Datasheet HTML 6Page - Renesas Technology Corp BCR16CS-16LB Datasheet HTML 7Page - Renesas Technology Corp BCR16CS-16LB Datasheet HTML 8Page - Renesas Technology Corp  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
BCR16CS-16LB
Preliminary
R07DS0226EJ0100 Rev.1.00
Page 2 of 7
Dec 14, 2010
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
—
—
2.0
mA
Tj = 150
C, V
DRM applied
On-state voltage
VTM
—
—
1.5
V
Tc = 25
C, I
TM = 25 A,
Instantaneous measurement
VFGT
—
—
1.5
V

VRGT
—
—
1.5
V
Gate trigger voltage
Note2

VRGT
—
—
1.5
V
Tj = 25
C, V
D = 6 V, RL = 6 ,
RG = 330 
IFGT
—
—
30
mA

IRGT
—
—
30
mA
Gate trigger current
Note2

IRGT
—
—
30
mA
Tj = 25
C, V
D = 6 V, RL = 6 ,
RG = 330 
Gate non-trigger voltage
VGD
0.2/0.1
—
—
V
Tj = 125
C/150C, V
D = 1/2 VDRM
Thermal resistance
Rth (j-c)
—
—
1.4
C/W
Junction to case
Note3 Note4
Critical-rate of rise of off-state
commutating voltage
Note5
(dv/dt)c
10/1
—
—
V/
s
Tj = 125
C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125
C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
VD
(dv/dt)c



Html Pages

1 2 3 4 5 6 7 8


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com