| 전자부품 데이터시트 검색엔진 |
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ZXLD1321 데이터시트(PDF) 3 Page - Diodes Incorporated |
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ZXLD1321 데이터시트(HTML) 3 Page - Diodes Incorporated |
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3 / 20 page ![]() ZXLD1321 Issue 1 - January 2008 3 www.zetex.com © Zetex Semiconductors plc 2008 Absolute maximum ratings (Voltages relative to GND unless otherwise stated) DC-DC converter High-side current monitor Switching NPN transistor These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum ratings for extended periods may reduce device reliability. Thermal resistance Operating temperature (top) -40 to 125 °C Storage temperature (Tst) -55 to 150 °C Junction temperature (Tj) -40 to 150 °C Package power dissipation (Ptot) DFN-14 with exposed pad: 4mmx3mm, 0.5mm Pitch 1.5W at Tamb = 70 °C Supply voltage (VIN) -0.3V to +12V ADJ -0.3V to The lower of (+5.0V) or (VIN + 0.3V) CFB -0.3V to The lower of (+5.0V) or (VIN + 0.3V) ISENSE -0.3V to The lower of (+5.0V) or (VIN + 0.3V) TADJ -0.3V to The lower of (+5.0V) or (VIN + 0.3V) BIAS -0.3V to The lower of (+5.0V) or (VIN + 0.3V) Monitor supply voltage (M_VIN) -0.3V to +18V Continuous sense voltage (M_VIN – M_LOAD) -0.3V to +5V Collector-Base voltage (VCBO) 18V Collector-Emitter voltage (VCEO) 18V Peak pulse current (ICM) 3A (Pulse width = 300µs. Duty cycle<=2%) Continuous Collector current (IC) 2A Junction to case (R JC) Nominal value DFN-14 26.3°C/W |
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