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ZXMC3F31DN8 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 ZXMC3F31DN8
상세설명  30V SO8 Complementary dual enhancement mode
PDF  11 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMC3F31DN8 데이터시트(HTML) 4 Page - Diodes Incorporated

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ZXMC3F31DN8
Q1 N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
V(BR)DSS
30
V
ID = 250μA, VGS=0V
Zero Gate voltage Drain
current
IDSS
0.5
µA
VDS=30V, VGS=0V
Gate-Body leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-Source threshold
voltage
VGS(th)
1.0
3.0
V
ID= 250μA, VDS=VGS
Static Drain-Source
on-state resistance
(*)
RDS(on)
0.024
0.039
Ω
VGS= 10V, ID= 7.0A
VGS= 4.5, ID= 6.0A
Forward
Transconductance
(*) (†)
gfs
16.5
S
VDS= 15V, ID= 7.0A
Dynamic
(†)
Input capacitance
Ciss
608
pF
Output capacitance
Coss
132
pF
Reverse transfer
capacitance
Crss
72
pF
VDS= 15V, VGS=0V
f=1MHz
Switching
(‡) (†)
Turn-on-delay time
td(on)
2.9
ns
Rise time
tr
3.3
ns
Turn-off delay time
td(off)
16
ns
Fall time
tf
8
ns
VDD= 15V, VGS=10V
ID= 1A
RG ≅ 6.0Ω,
Total Gate charge
Qg
12.9
nC
Gate-Source charge
Qgs
2.5
nC
Gate-Drain charge
Qgd
2.52
nC
VDS= 15V, VGS= 10V
ID= 7A
Source–Drain diode
Diode forward voltage
(*)
VSD
0.82
1.2
V
IS= 1.7A,VGS=0V
Reverse recovery time
(‡)
trr
12
ns
Reverse recovery charge
(‡)
Qrr
4.8
nC
IS= 2.2A,di/dt=100A/μs
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
Issue 1 - September 2008
4
© Diodes Incorporated 2008
www.zetex.com
www.diodes.com



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