| 전자부품 데이터시트 검색엔진 |
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ZXMD63P02XTC 데이터시트(PDF) 2 Page - Diodes Incorporated |
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ZXMD63P02XTC 데이터시트(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() ZXMD63P02X 2 THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) RθJA 143 °C/W Junction to Ambient (b)(d) RθJA 100 °C/W Junction to Ambient (a)(e) RθJA 120 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -20 V Gate- Source Voltage VGS ± 12 V Continuous Drain Current (VGS=4.5V; TA=25°C)(b)(d) (VGS=4.5V; TA=70°C)(b)(d) ID -1.7 -1.35 A Pulsed Drain Current (c)(d) IDM -9.6 A Continuous Source Current (Body Diode)(b)(d) IS -1.4 A Pulsed Source Current (Body Diode)(c)(d) ISM -9.6 A Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 0.87 6.9 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.04 8.3 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 1.25 10 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ISSUE 1 - JUNE 2004 |
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