ZXMN2AMC

Document number: DS35089 Rev. 1 - 2

2 of 8

www.diodes.com

December 2010

© Diodes Incorporated

ZXMN2AMC

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

Continuous Drain Current

(Notes 4 & 7)

3.7

A

3.0

(Notes 3 & 7)

2.9

Pulsed Drain Current

(Notes 6 & 7)

13

Continuous Source Current (Body diode)

(Notes 4 & 7)

3.0

Pulse Source Current (Body diode)

(Notes 6 & 7)

13

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Notes 3 & 7)

1.50

12

W

mW/°C

(Notes 4 & 7)

2.45

19.6

(Notes 5 & 7)

1.13

9

(Notes 5 & 8)

1.70

13.6

Thermal Resistance, Junction to Ambient

(Notes 3 & 7)

83.3

°C/W

(Notes 4 & 7)

51.0

(Notes 5 & 7)

111

(Notes 5 & 8)

73.5

Thermal Resistance, Junction to Lead

(Notes 7 & 9)

17.1

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

3. For a device surface mounted on 28mm x 28mm (8 sq cm) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.

4. Same as note (3) except the device is measured at t < 5 sec.

5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10 sq cm) FR4 PCB with high coverage of single sided 1oz copper.

6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

7. For a dual device with one active die.

8. For dual device with 2 active die running at equal power.

9. Thermal resistance from junction to solder-point (at the end of the drain lead).