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CEP84A4 데이터시트(PDF) 1 Page - Chino-Excel Technology |
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CEP84A4 데이터시트(HTML) 1 Page - Chino-Excel Technology |
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1 / 4 page ![]() N-Channel Enhancement Mode Field Effect Transistor CEP84A4/CEB84A4 FEATURES 40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS PD IDM 40 0.47 71 360 62 ±20 V W A A V W/ C 1 G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 RDS(ON) = 7.8mΩ @VGS = 4.5V. Lead free product is acquired. http://www.cetsemi.com Rev 1. 2010.Oct. Details are subject to change without notice . S G D Drain Current-Continuous@ TC = 25 C ID 90 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 2.1 RθJC RθJA |
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