ZXMP6A13F

Document Number DS32014 Rev. 4 - 2

4 of 8

www.diodes.com

November 2009

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXMP6A13F

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-60

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

-0.5

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1.0

⎯

⎯

V

Static Drain-Source On-Resistance (Note 4)

⎯

⎯

0.400

Ω

0.600

Forward Transconductance (Notes 4 and 6)

⎯

1.8

⎯

S

Diode Forward Voltage (Note 4)

⎯

-0.85

-0.95

V

Reverse Recovery Time (Note 6)

⎯

21.1

⎯

ns

di/dt = 100A/

μs

Reverse Recovery Charge (Note 6)

⎯

19.3

⎯

nC

DYNAMIC CHARACTERISTICS

(Note 6)

Input Capacitance

⎯

219

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

25.7

⎯

Reverse Transfer Capacitance

⎯

20.5

⎯

Turn-On Delay Time (Note 5)

⎯

1.6

⎯

ns

Turn-On Rise Time (Note 5)

⎯

2.2

⎯

Turn-Off Delay Time (Note 5)

⎯

11.2

⎯

Turn-Off Fall Time (Note 5)

⎯

5.7

⎯

Total Gate Charge (Note 5)

⎯

2.9

⎯

nC

Total Gate Charge (Note 5)

⎯

5.9

⎯

nC

Gate-Source Charge (Note 5)

⎯

0.74

⎯

Gate-Drain Charge (Note 5)

⎯

1.5

⎯

Notes:

4. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

6. For design aid only, not subject to production testing.