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ZXMP6A13FTA 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 ZXMP6A13FTA
상세설명  60V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP6A13FTA 데이터시트(HTML) 2 Page - Diodes Incorporated

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ZXMP6A13F
Document Number DS32014 Rev. 4 - 2
2 of 8
www.diodes.com
November 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A13F
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
VGS = 10V
(Note 2)
TA = 70°C (Note 2)
(Note 1)
ID
-1.1
-0.8
-0.9
A
Pulsed Drain Current (Note 3)
IDM
-4.0
A
Continuous Source Current (Body Diode) (Note 2)
IS
-1.2
A
Pulsed Source Current (Body Diode) (Note 3)
ISM
-4.0
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation (Note 2)
Linear Derating Factor
PD
806
6.5
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
200
°C/W
Thermal Resistance, Junction to Ambient (Note 2)
RθJA
155
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
2. For a device surface mounted on FR4 PCB measured at t
≤5 secs.
3. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10
μs - pulse current limited by maximum junction temperature.



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