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ZXMP6A16K 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 ZXMP6A16K
상세설명  60V DPAK P-channel enhancement mode MOSFET
PDF  8 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP6A16K 데이터시트(HTML) 4 Page - Diodes Incorporated

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ZXMP6A16K
Issue 3 - June 2007
4
www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown voltage V(BR)DSS
-60
V
ID= -250 A, VGS=0V
Zero gate voltage drain current
IDSS
-1.0
AVDS= -60V, VGS=0V
Gate-body leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-source threshold voltage
VGS(th)
-1.0
V
ID= -250 A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
2%.
RDS(on)
0.085
VGS= -10V, ID= -2.9A
0.125
VGS= -4.5V, ID = -2.4A
Forward transconductance(*) (‡)
gfs
7.2
S
VDS= -15V, ID= -2.9A
Dynamic(‡)
Input capacitance
Ciss
1021
pF
VDS= -30V, VGS=0V
f=1MHz
Output capacitance
Coss
83
pF
Reverse transfer capacitance
Crss
56
pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time
td(on)
3.5
ns
VDD= -30V, ID= -1A
RG≅6.0 , VGS= -10V
Rise time
tr
4.1
ns
Turn-off delay time
td(off)
35
ns
Fall time
tf
10
ns
Gate charge
Qg
12.1
nC
VDS= -30V, VGS= -5V
ID= -2.9A
Total gate charge
Qg
24.2
nC
VDS= -30V, VGS= -10V
ID= -2.9A
Gate-source charge
Qgs
2.5
nC
Gate drain charge
Qgd
3.7
nC
Source-drain diode
Diode forward voltage(*)
VSD
-0.85
-0.95
V
Tj=25°C, IS= -3.4A,
VGS=0V
Reverse recovery time(‡)
trr
29.2
ns
Tj=25°C, IS= -2A,
di/dt=100A/ s
Reverse recovery charge(‡)
Qrr
39.6
nC



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