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ZXMP6A18DN8 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 ZXMP6A18DN8
상세설명  DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
PDF  7 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP6A18DN8 데이터시트(HTML) 4 Page - Diodes Incorporated

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ZXMP6A18DN8
ISSUE 1 - MAY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
-60
V
ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
-1.0
AVDS=-60V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS= 20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
-1.0
V
I
D
=-250 A,
VDS=VGS
Static Drain-Source On-State Resistance
(1)
RDS(on)
0.055
0.080
VGS=-10V, ID=-3.5A
VGS=-4.5V, ID=-2.9A
Forward Transconductance
(1)(3)
gfs
8.7
S
VDS=-15V,ID=-3.5A
DYNAMIC
(3)
Input Capacitance
Ciss
1580
pF
VDS=-30 V, VGS=0V,
f=1MHz
Output Capacitance
Coss
160
pF
Reverse Transfer Capacitance
Crss
140
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
4.6
ns
VDD =-30V, ID=-1A
RG≅6.0 ,VGS=-10V
Rise Time
tr
5.8
ns
Turn-Off Delay Time
td(off)
55
ns
Fall Time
tf
23
ns
Gate Charge
Qg
23
nC
VDS=-30V,VGS=-5V,
ID=-3.5A
Total Gate Charge
Qg
44
nC
VDS=-30V,VGS=-10V,
ID=-3.5A
Gate-Source Charge
Qgs
3.9
nC
Gate-Drain Charge
Qgd
9.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
VSD
-0.85
-0.95
V
TJ=25°C, IS=-4.2A,
VGS=0V
Reverse Recovery Time
(3)
trr
37
ns
TJ=25°C, IF=-2.1A,
di/dt= 100A/
µs
Reverse Recovery Charge
(3)
Qrr
56
nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.



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