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ZXMP7A17KTC 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 ZXMP7A17KTC
상세설명  70V P-channel enhancement mode MOSFET
PDF  8 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP7A17KTC 데이터시트(HTML) 4 Page - Diodes Incorporated

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ZXMP7A17K
Issue 2 - August 2006
4
www.zetex.com
© Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
voltage
V(BR)DSS
-70
V
ID= -250 A, VGS=0V
Zero gate voltage drain
current
IDSS
-1
AVDS= -70V, VGS=0V
Gate-body leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-source threshold voltage VGS(th)
-1.0
V
ID= -250 A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
RDS(on)
0.16
VGS= -10V, ID= -2.1A
0.25
VGS= -4.5V, ID = -1.7A
Forward transconductance(*)(‡) gfs
4.4
S
VDS= -15V, ID= -2.1A
Dynamic(‡)
Input capacitance
Ciss
635
pF
VDS= -40V, VGS=0V
f=1MHz
Output capacitance
Coss
52
pF
Reverse transfer capacitance
Crss
42.5
pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time
td(on)
2.5
ns
VDD= -35V, ID= -1A
RG≅6.0 , VGS= -10V
Rise time
tr
3.4
ns
Turn-off delay time
td(off)
27.9
ns
Fall time
tf
8ns
Total gate charge
Qg
9.6
nC
VDS= -35V, VGS= -5V
ID= -2.1A
Total gate charge
Qg
18
nC
VDS= -35V, VGS= -10V
ID= -2.1A
Gate-source charge
Qgs
1.77
nC
Gate drain charge
Qgd
3.66
nC
Source-drain diode
Diode forward voltage(*)
VSD
-0.85
-0.95
V
Tj=25°C, IS= -2.0A,
VGS=0V
Reverse recovery time(‡)
trr
29.8
ns
Tj=25°C, IS= -2.1A,
di/dt=100A/ s
Reverse recovery charge(‡)
Qrr
38.5
nC



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