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ZXMS6002G 데이터시트(PDF) 1 Page - Diodes Incorporated |
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ZXMS6002G 데이터시트(HTML) 1 Page - Diodes Incorporated |
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1 / 10 page ![]() Issue 3 - June 2007 1 www.zetex.com © Zetex Semiconductors plc 2007 ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET™ MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m Nominal load current (VIN = 5V) 1.4A Clamping energy 550mJ Description Ordering information Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch, with status indication. Features • Status pin (analog status indication) • Short circuit protection with auto restart • Over voltage protection (active clamp) • Thermal shutdown with auto restart • Over-current protection • Input protection (ESD) • Load dump protection (actively protects load) • Logic level input • High continuous current rating Note: The tab is connected to the drain pin and must be electrically isolated from the source pin. Connection of significant copper to the tab is recommended for best thermal performance. Device Part mark Reel size (inches) Tape width (mm) Quantity per reel ZXMS6002GTA ZXMS6002 7 12 embossed 1000 D Top view S Status IN |
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