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ZXTC4591AMCTA 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 ZXTC4591AMCTA
상세설명  COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR
PDF  9 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTC4591AMCTA 데이터시트(HTML) 2 Page - Diodes Incorporated

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ZXTC4591AMC
Document number: DS31925 Rev. 2 - 2
2 of 9
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
Maximum Ratings
Parameter
Symbol
NPN
PNP
Unit
Collector-Base Voltage
VCBO
40
-40
V
Collector-Emitter Voltage
VCEO
40
-40
V
Emitter-Base Voltage
VEBO
5
-5
V
Peak Pulse Current
ICM
3
-3
A
Continuous Collector Current(a)(f)
IC
2
-1.5
A
Continuous Collector Current(b)(f)
IC
2.5
-2.0
A
Base Current
IB
300
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation at TA = 25°C (a) (f)
Linear Derating Factor
PD
1.5
12
W
mW/
°C
Power Dissipation at TA = 25°C (b) (f)
Linear Derating Factor
PD
2.45
19.6
W
mW/
°C
Power Dissipation at TA = 25°C (c) (f)
Linear Derating Factor
PD
1
8
W
mW/
°C
Power Dissipation at TA = 25°C (d) (f)
Linear Derating Factor
PD
1.13
9
W
mW/
°C
Power Dissipation at TA = 25°C (d) (g)
Linear Derating Factor
PD
1.7
13.6
W
mW/
°C
Power Dissipation at TA = 25°C (e) (g)
Linear Derating Factor
PD
3
24
W
mW/
°C
Junction to Ambient (a) (f)
RθJA
83.3
°C/W
Junction to Ambient (b) (f)
RθJA
51
°C/W
Junction to Ambient (c) (f)
RθJA
125
°C/W
Junction to Ambient (d) (f)
RθJA
111
°C/W
Junction to Ambient (d) (g)
RθJA
73.5
°C/W
Junction to Ambient (e) (g)
RθJA
41.7
°C/W
Junction Temerature
TJ
150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Notes:
a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper
area is split down the centre line into two separate areas with one half connected to each half of the dual device.
b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
f. For a dual device with one active die.
g. For dual device with 2 active die running at equal power.



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