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ZXTD720MC 데이터시트(PDF) 2 Page - Diodes Incorporated |
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ZXTD720MC 데이터시트(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() ZXTD720MC Document Number DS31935 Rev. 2 - 2 2 of 7 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD720MC Maximum Ratings Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -7.5 V Peak Pulse Current ICM -4 A Continuous Collector Current (Notes a and b) IC -3 A Base Current IB -1 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation at TA = 25°C (Notes a and f) Linear Derating Factor PD 1.5 12 W mW/ °C Power Dissipation at TA = 25°C (Notes b and f) Linear Derating Factor PD 2.45 19.6 W mW/ °C Power Dissipation at TA = 25°C (Notes c and f) Linear Derating Factor PD 1 8 W mW/ °C Power Dissipation at TA = 25°C (Notes d and f) Linear Derating Factor PD 1.13 9 W mW/ °C Power Dissipation at TA = 25°C (Notes d and g) Linear Derating Factor PD 1.7 13.6 W mW/ °C Power Dissipation at TA = 25°C (Notes e and g) Linear Derating Factor PD 3 24 W mW/ °C Junction to Ambient (Notes a and f) RθJA 83.3 °C/W Junction to Ambient (Notes b and f) RθJA 51 °C/W Junction to Ambient (Notes c and f) RθJA 125 °C/W Junction to Ambient (Notes d and f) RθJA 111 °C/W Junction to Ambient (Notes d and g) RθJA 73.5 °C/W Junction to Ambient (Notes e and g) RθJA 41.7 °C/W Junction Temperature TJ 150 °C Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only. d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. For a dual device with one active die. g. For dual device with 2 active die running at equal power. |
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