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ZXTP2041F 데이터시트(PDF) 2 Page - Diodes Incorporated |
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ZXTP2041F 데이터시트(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page ![]() ZXTP2041F Datasheet Number: DS33721 Rev. 6 - 2 2 of 6 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTP2041F Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current (Note 3) IC -1 A Peak Pulse Current ICM -2 A Peak Base Current IBM -1 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector Power Dissipation (Note 3) PD 350 mW Thermal Resistance, Junction to Ambient (Note 3) RθJA 357 °C/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C Notes: 3. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 0 255075 100 125 150 0.0 0.1 0.2 0.3 0.4 Derating Curve Temperature (°C) 100µ 1m 10m 100m 1 10 100 1k 0 50 100 150 200 250 300 350 400 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Pulse Width (s) 10m 100m 1 10 100 1k 0.1 1 10 Single Pulse. T amb =25°C Pulse Power Dissipation Pulse Width (s) |
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