CEU6355 datasheet(1/4 Pages) CET

부품명	CEU6355

상세설명	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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제조업체	CET [Chino-Excel Technology]

홈페이지	http://www.cetsemi.com

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P-Channel Enhancement Mode Field Effect Transistor

CED6355/CEU6355

FEATURES

-60V, -26A, RDS(ON) = 42mΩ

@VGS = -10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-251 & TO-252 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

-60

0.4

50

-104

-26

±20

V

W

A

V

W/ C

1

S

G

D

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

G

S

D

PRELIMINARY

RDS(ON) = 65mΩ

@VGS = -4.5V.

Lead free product is acquired.

This is preliminary information on a new product in development now .

Details are subject to change without notice .

http://www.cetsemi.com

Rev 1.

2006.Aug

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

50

2.5

R

θJC

R

θJA

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CEU6355 데이터시트(PDF) 1 Page - Chino-Excel Technology

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