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2SC5000 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 2SC5000
상세설명  Power Amplifier Applications
PDF  3 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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2SC5000 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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2SC5000
2004-07-26
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applications
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
10
A
Base current
IB
1
A
Collector power dissipation
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 70 V, IE = 0
1
µA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
1
µA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
DC current gain
hFE (1)
VCE = 1 V, IC = 1 A
120
400
Collector-emitter
VCE (sat)
IC = 5 A, IB = 0.25 A
0.19
0.4
Saturation voltage
Base-emitter
VBE (sat)
IC = 5 A, IB = 0.25 A
0.96
1.4
V
Transition frequency
fT
VCE = 1 V, IC = 1 A
90
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
90
pF
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
C5000
Part No. (or abbreviation code)


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