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2SC5376FV 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 2SC5376FV
상세설명  Audio Frequency General Purpose Amplifier Applications
PDF  5 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5376FV 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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2SC5376FV
2004-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376FV
Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications
• Low Collector Saturation Voltage:
VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
• High Collector Current: IC = 400 mA (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC
150 *
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
* : Mounted on FR4 board (25.4 mm
× 25.4 mm × 1.6mmt)
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015g (typ.)
F A
Type Name
hFE Classification
1.BASE
2.EMITTER
3.COLLECTOR
VESM
1
2
3
0.8±0.05
1.2±0.05
0.5mm
0.45mm
0.45mm
0.4mm


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