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2SC5458 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 2SC5458
상세설명  High Voltage Switching Applications
PDF  5 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5458 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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2SC5458
2005-02-01
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5458
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
DC-AC Inverter Applications
• Excellent switching times: tr = 0.5 µs (max)
tf = 0.3 µs (max) (IC = 0.4 A)
• High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
0.8
Collector current
Pulse
ICP
1.5
A
Base current
IB
0.5
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)


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