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2SC5550 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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2SC5550 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page ![]() 2SC5550 2004-07-26 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A) • High breakdown voltage: VCEO = 400 V Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 1 Collector current Pulse ICP 2 A Base current IB 0.5 A Ta = 25°C 1.5 Collector power dissipation Tc = 25°C PC 10 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) |
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