2SC5692 datasheet(1/5 Pages) TOSHIBA

부품명	2SC5692

상세설명	High-Speed Switching Applications

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2SC5692

2004-07-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5692

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

•

High DC current gain: hFE = 400 to 1000 (IC = 0.3 A)

•

Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

•

High-speed switching: tf = 120 ns (typ.)

Maximum Ratings (Ta

= 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

100

V

Collector-emitter voltage

VCEX

80

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

7

V

DC

IC

2.5

Collector current

Pulse

ICP

4.0

A

Base current

IB

250

mA

DC

625

Collector power

dissipation

t

= 10 s

PC

(Note)

1000

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm

2)

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 100 V, IE = 0

⎯

100

nA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

⎯

100

nA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

50

⎯

V

hFE (1)

VCE = 2 V, IC = 0.3 A

400

⎯

1000

DC current gain

hFE (2)

VCE = 2 V, IC = 1 A

200

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 1 A, IB = 20 mA

⎯

0.14

V

Base-emitter saturation voltage

VBE (sat)

IC = 1 A, IB = 20 mA

⎯

1.10

V

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

13

⎯

pF

Rise time

tr

⎯

40

⎯

Storage time

tstg

⎯

500

⎯

Switching time

Fall time

tf

See Figure 1.

VCC ∼− 30 V, RL = 30 Ω

IB1 = −IB2 = 33.3 mA

⎯

120

⎯

ns

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3S1A

Weight: 0.01 g (typ.)

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