2SJ508 datasheet(2/6 Pages) TOSHIBA

2 / 6 page

2SJ508

2009-09-29

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

μA

Drain cut−off current

IDSS

VDS = −100 V, VGS = 0 V

—

−100

μA

Drain−source breakdown

voltage

V (BR) DSS

ID = −10 mA, VGS = 0 V

−100

—

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

—

−2.0

VGS = −4 V, ID = −0.5 A

—

1.68

2.5

Drain−source ON resistance

RDS (ON)

VGS = −10 V, ID = −0.5 A

—

1.34

1.9

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −0.5 A

0.3

0.7

—

Input capacitance

Ciss

—

135

—

Reverse transfer capacitance

Crss

—

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

—

Rise time

—

Turn−on time

ton

—

Fall time

—

Switching time

Turn−off time

toff

—

130

—

Total gate charge (Gate−source

plus gate−drain)

—

6.3

—

Gate−source charge

Qgs

—

4.1

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ −80 V, VGS = −10 V,

ID = −1 A

—

2.2

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

−1

Pulse drain reverse current

(Note 1)

IDRP

—

−3

Forward voltage (diode)

VDSF

IDR = −1 A, VGS = 0 V

—

1.5

Reverse recovery time

trr

—

Reverse recovery charge

Qrr

IDR = −1 A, VGS = 0 V

dIDR / dt = 50 A / μs

—

180

—

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