2N5152 datasheet(2/2 Pages) MICROSEMI

2 / 2 page

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/544

T4-LDS-0039 Rev. 1 (080797)

Page 2 of 2

ELECTRICAL CHARACTERISTICS (con’t)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

IC = 5Adc, VCE = 5Vdc

2N5152

2N5154

hFE

Collector-Emitter Saturation Voltage

IC = 2.5Adc, IB = 250mAdc

IC = 5.0Adc, IB = 500mAdc

VCE(sat)

0.75

1.5

Vdc

Base-Emitter Voltage Non-Saturation

IC = 2.5Adc, VCE = 5Vdc

VBE

1.45

Vdc

Base-Emitter Saturation Voltage

IC = 2.5Adc, IB = 250mAdc

IC = 5.0Adc, IB = 500mAdc

VBE(sat)

1.45

2.2

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 500mAdc, VCE = 5Vdc, f = 10MHz

2N5152

2N5154

|hfe|

Small-signal short Circuit Forward-Current Transfer Ratio

IC = 100mAdc, VCE = 5Vdc, f = 1KHz

2N5152

2N5154

hfe

Output Capacitance

VCB = 10Vdc, IE = 0, f = 1.0MHz

Cobo

250

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Turn-On Time

IC = 5Adc, IB1 = 500mAdc

ton

0.5

μs

Turn-Off Time

RL = 6Ω

toff

1.5

μs

Storage Time

IB2 = -500mAdc

1.4

μs

Fall Time

VBE(OFF) = 3.7Vdc

0.5

μs

SAFE OPERATING AREA

DC Tests

TC = +25°C, 1 Cycle, tP = 1.0s

Test 1

VCE = 5.0Vdc, IC = 2.0Adc

Test 2

VCE = 32Vdc, IC = 310mAdc

Test 3

VCE = 80Vdc, IC = 12.5mAdc

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