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2N5666 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 2N5666
상세설명  NPN POWER SILICON SWITCHING TRANSISTOR
PDF  3 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N5666 데이터시트(HTML) 2 Page - Microsemi Corporation

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095)
Page 2 of 3
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 0.5Adc, VCE = 2.0Vdc
2N5664, 2N5666
2N5665, 2N5667
40
25
IC = 1.0Adc, VCE = 5.0Vdc
2N5664, 2N5666
2N5665, 2N5667
40
25
120
75
IC = 3.0Adc, VCE = 5.0Vdc
2N5664, 2N5666
2N5665, 2N5667
15
10
IC = 5.0Adc, VCE = 5.0Vdc
All Types
hFE
5.0
Collector-Emitter Saturation Voltage
IC = 3.0Adc, IB = 0.3Adc
2N5664, 2N5666
0.4
IC = 3.0Adc, IB = 0.6Adc
2N5665, 2N5667
0.4
IC = 5.0Adc, IB = 1.0Adc
All Types
VCE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 3.0Adc, IB = 0.3Adc
2N5664, 2N5666
1.2
IC = 3.0Adc, IB = 0.6Adc
2N5665, 2N5667
1.2
IC = 5.0Adc, IB = 1.0Adc
All Types
VBE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 0.5Adc, VCE = 5.0Vdc, f = 10MHz
|hfe|
2.0
7.0
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
120
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
VCC = 100Vdc; IC = 1.0Adc; IB1 = 30mAdc
ton
0.25
μs
Turn-Off Time
VCC = 100Vdc; IC = 1.0Adc; IB1 = -IB2 = 50mAdc
2N5664, 2N5666
2N5665, 2N5667
toff
1.5
2.0
μs



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